Preparation of AlN:Mn films by metalorganic chemical vapor deposition for thin film electroluminescent devices

Abstract

AlN:Mn films with Mn concentrations ranging from 2 × 1018 to 1 × 1021 cm−3 have been prepared by metalorganic chemical vapor deposition using bismethylcyclopentadienyl-manganese as a Mn source. The films grown at 1050 °C were polycrystals, whereas those grown at substrate temperatures (Ts) lower than 800 °C were mixture of polycrystalline and amorphous AlN, with the ratio of the latter phase increasing with decreasing Ts. The films showed red–orange photoluminescence based on the transitions of d-electrons in Mn4+ ions at room temperature. The intensity of the Mn-related emission increased with decreasing Ts. The Ts dependence of PL was discussed in conection with the structual properties of the films. The electroluminescence (EL) properties were also investigated by fabricating thin film EL devices on glass substrates. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)