Preparation by a Sol–Gel Process and Dielectric Properties of Lead Zirconate Titanate Glass-Ceramic Thin Films

Abstract

Ferroelectric glass-ceramic thin films of PbZr0.5Ti0.5O3(PZT)–PbO–B2O3, PZT–PbO–SiO2 and PZT–PbO– SiO2–B2O3 were produced by a sol-gel process. A pin-hole-free thin film of 300–500 nm thickness on a Pt/Ti/ SiO2/Si substrate was obtained having a structure in which small PZT crystals developed in a glass matrix. A high PZT content, of more than 80%, was achieved at levels unattainable by a conventional glass-ceramics preparation method. The perovskite-type PZT crystallized at around 500° C in the pure PZT, PZT–PbO–B2O3, and PZT–PbO–SiO2–B2O3 systems and at around 700° C in the PZT–PbO–SiO2 system. The dielectric properties of the 0.835PZT–0.165(3PbO·SiO2·B2O3) film fired at 700° C with gold electrodes were ε=1000, and tan δ=0.035.