Abstract
PbTiO 3 (PT)-PbO-B 2 O 3 ferroelectric glass-ceramic thin films were produced by a sol-gel process. A pin-hole free thin film was obtained when it was prepared in a way that small PT crystals developed in a glass matrix using the RTA technique. The achievement of high PT content (> 50 mol%) at levels unattainable by the conventional glass-ceramics preparation methods was semiquantitatively shown. PT crystallized at a temperature below 500°C. The dielectric properties of the 0.6PT-0.4(PbO.B 2 O 3 ) film fired at 600°C were s=143, and tan δ=0.04.
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