Abstract
A method of preparing p-n PbSe-Si heterojunctions using a solution-growth technique at room temperature is reported. Under proper conditions, a highly oriented PbSe layer is formed on a (111) silicon substrate. Capacitance-voltage measurements have shown that the junctions are abrupt in nature. Analysis of the current-voltage characteristic indicates two modes of carrier transport, due to a recombination-tunnelling process across the junction. Based on the results, the energy-band diagram for these heterojunctions has been constructed. The usefulness of these photodiodes for infra-red detection is established by the spectral response measurements showing peaks at 2·1 and 4·3 μm.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
