Abstract
AbstractCu(In1–xGax)(S1–ySey)2 (CIGSS) thin films were prepared by the simultaneous selenizarion/sulfurization of Cu‐In‐Ga metallic alloys. Full characterizations have been carried out using XRD, SEM, EDX, AES and Raman scattering measurements. Photosensitive In/p ‐CIGSS surface‐barrier rectifying structures were created by thermal deposition of pure Incontacts onto the surface of the CIGSS as grown films. The influences of the thin films chemical composition and the illumination conditions on the photo‐electric parameters of In/p ‐CIGSS structures were studied. Analysis of the results showed the availability of the prepared CIGSS films for creation of high efficiency thin films photovoltaic devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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