Abstract
The phase composition and structural and optical characteristics of thin films of Cu(In1–xGax)(SySe1–y)2 solid solutions with the chalcopyrite structure were investigated. The unit-cell constants according to x-ray diffraction analysis were a ~ 5.720 A and c ~ 11.52 A. The elemental compositions were x = Ga/(Ga + In) ~ 0.14 and y = S/(S + Se) ~ 0.11 for Cu(In1–xGax)(S ySe1–y)2 thin films. The optical band gap of Cu(In1–xGax)(S ySe1–y)2 solid solutions determined from measurements of photoluminescence spectra and luminescence excitation spectra at ~4.2 K was Eg ~ 1.122 eV. The mechanism of radiative recombination of nonequilibrium charge carriers in thin films of Cu(In1–xGax) (S ySe1–y)2 solid solutions is discussed.
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