Abstract
In the paper, Cu3Sb(Sx,Se1-x)4 thin films were prepared by spin-coating method involving deposition of copper antimony sulfide precursor and then selenization of precursor in double-temperature zone space. The influence of selenium source temperature on properties of Cu3Sb(Sx,Se1-x)4 thin films was investigated. The phase structure, elemental composition, microstructure, optical and electrical properties were analyzed using appropriate characterization techniques. The results demonstrated Cu3Sb(Sx,Se1-x)4 thin films after selenization treatment had better crystallinity but Sb2Se3 impurity phase. The EDS analysis revealed that the Se concentration in the thin films increased with selenium source temperature. Morphological study indicated that the large grain appeared on the surface of thin films at higher selenium source temperature. The band gap of thin films linearly decreased with the increase of Se concentration. The as-prepared Cu3Sb(Sx,Se1-x)4 thin film showed p-type electrical behavior and an obvious photoconductivity.
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