Preparation and properties of Bi6Fe2Ti3O18 thin films on metallic Ni tapes by chemical solution deposition

Abstract

Ferroelectric Bi6Fe2Ti3O18 (BFTO) thin films were deposited on flexible metallic Ni (200) tapes by chemical solution deposition method. The effects of annealing temperature and La0.5Sr0.5TiO3 (LSTO) buffer layer on the microstructure, dielectric, leakage and ferroelectric properties have been studied. With increasing annealing temperature, the crystallite size increases while the dielectric constant, the leakage current density, the coercive field and the remnant polarization increase initially and then decrease. At low annealing temperature BFTO thin films on Ni tapes display flat surface without cracks, no NiO phase and good ferroelectric hysteresis loops. At high annealing temperature improved ferroelectric properties can be only observed in BFTO thin films on Ni tapes with a LSTO buffer layers. It will provide an instructive route to prepare and optimize the properties of BFTO thin films on metallic tapes by chemical solution deposition method.