Preparation and Microstructure of Tantalum Nitride Thin Filmby Cathodic Arc Deposition

Abstract

Tantalum nitride (TaN) thin films are achieved on Si(111) and SS317Lsubstrates by cathodic vacuum arc technique, which is rarely reportedin the literature. The crystal structure, composition and surfacemorphology of the films are characterized by x-ray diffraction (XRD),x-ray photoelectron spectroscopy (XPS), auger electron spectroscopy,and atomic force microscopy, respectively. The influence of substratenegative bias on crystal structure, composition, surface morphology ofthe TaN films is systematically studied. At the substrate bias of 0 Vand -50 V, the amorphous TaN film is obtained. As the bias increases to-100 V, cubic TaN phase can be found. Stoichiometric TaN with hexagonallattice preferred (300) orientation is prepared at a bias of -200 V.Combine the XRD and XPS results, the binding energy value of 23.6 eV ofTa 4f7/2 is contributed to hexagonal TaN. Compared to othertechniques, TaN thin films fabricated by cathodic vacuum arc at varioussubstrate biases show different microstructures.