Abstract
We have evaluated the ferroelectric and electrical properties of pure BiFeO3 (BFO) and (Bi0.9Ho0.1)(Fe0.975Ti0.025)O3+δ (BHFTO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The improved electrical properties were observed in the BHFTO thin film. The leakage current density of the co-doped BHFTO thin film showed three order lower than that of the pure BFO, 1.22 × 10−6A/cm2at 100 kV/cm. The remnant polarization (2Pr) and the coercive electric field (2Ec) of the BHFTO thin film were 61 μC/cm2and 1190 kV/cm at an applied electric field of 800 kV/cm and at a frequency of 1 kHz and these values decreased with increasing measurement frequency, 35 μC/cm2and 920 kV/cm at 10 kHz, respectively. Also, the 2Pr and the 2Ec values were fairly saturated above 30 kHz.
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