Abstract
We prepared pure BiFeO3 (BFO) and co-doped (Bi0.9Nd0.1)(Fe0.975V0.025)O3+δ (BNFVO) thin films on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BNFVO thin film. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO, 2.6 × 10−7 A/cm2 at 100 kV/cm. The remnant polarization (2Pr) and the coercive electric field (2Ec) of the co-doped BNFVO thin film were 56 μC/cm2 and 1393 kV/cm at an applied electric field of 1110 kV/cm and at a frequency of 1 kHz, and the values decreased with increasing measurement frequency to 18 μC/cm2 and 1282 kV/cm at 10 kHz, respectively. We also confirmed that the remnant polarization (2Pr) and the coercive electric field (2Ec) were fairly saturated above a measurement frequency of 20 kHz for the BNFVO thin film.
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