Abstract
ABSTRACT Barium zirconium titanate Ba(ZrxTi1 - x)O3 (BZT, x = 0.05, 0.15, 0.2, 0.25, 0.3) thin films have been prepared on Pt/Ti/SiO2/Si substrates by sol-gel process. All films crystallized in the perovskite structure with a crack free microstructure. Dielectric properties of thin films have been investigated as a function of frequency and direct current electric field. The results show that thin films current leakage decrease with increasing Zr content. High tunability is obtained in BZT thin films, which imply that BZT thin films are promising materials for tunable microwave applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
