Preparation and characterization of ultrathin Pb and In films on PbTe and Te

Abstract

Ultrathin 10–300-Å films of Pb and In have been prepared by evaporation in ultrahigh vacuum onto single crystal PbTe and Te substrates at low temperatures. Epitaxial growth was obtained for both metals deposited on PbTe (100) at 77 K, but not on Te (101̄0). Low energy electron diffraction, Auger electron spectroscopy, and low energy electron energy loss measurements were used to characterize substrates and films. Values of low energy electron escape depths through Pb, In, and PbTe were also obtained.