Abstract
Thin films with layer sequences Nb/Hf/Nb and Nb/Ti/Nb/Au were prepared by electron-beam evaporation in ultrahigh vacuum. The interfaces were characterized by measuring the momentary surface properties by low energy electron diffraction and Auger electron spectroscopy after various evaporation steps. The Nb/Ti films were also investigated by Rutherford backscattering spectroscopy. Hydrogen charging was performed electrolytically or by implantation for Nb/Hf and Nb/Ti respectively. Hydrogen depth profiles were measured by the 15N nuclear reaction method. In the Nb/Hf films prepared at room temperature we found a strong accumulation of hydrogen in the hafnium layer. Owing to the high substrate temperature during evaporation, the Nb/Ti films showed some intermixing. In these films, hydrogen was almost equally distributed over the Nb/Ti/Nb layers. The out-diffusion of hydrogen through the gold layer started between 250 and 300 °C.
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