Silicon epitaxy grown by electron-beam evaporation in ultrahigh vacuum at 200 °C

Abstract

Silicon epitaxial growth at 200 °C is reported in this letter. The epitaxy was grown by electron-beam evaporation in an ultrahigh vacuum system. Wafers were in situ cleaned in the growth chamber by thermal desorption at 840 °C for 30 min. The wafer surface was examined by reflection high energy electron diffraction (RHEED). The epitaxial growth rate was at or higher than 0.020 nm/s. Epitaxial films were characterized by cross-sectional transmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS).