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Abstract
We have observed the fundamental operation of a superconducting base transistor using a Ba1-xKxBiO3 (BKBO) oxide superconductor. The transistor had a structure consisting of planar-type Au/natural-barrier/BKBO/niobium-doped SrTiO3 (STO:Nb), where Au, BKBO and STO:Nb correspond to the emitter, base and collector in the transistor, respectively. The Au/natural-barrier/BKBO emitter-base junction showed good tunneling characteristics, reflecting the superconductivity of BKBO. The BKBO/STO:Nb base-collector junction showed asymmetric I-V characteristics. Electrical measurements during transistor operation revealed collector current increment as the emitter current increased at 4.5 K. Furthermore, a transistor with a 100-nm thick base layer showed a maximum common-base current gain of over 0.5 at 4.5 K.
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