Year-end Sale % OFF 
Abstract
New InP/InGaAs δ-doped heterojunction bipolar transistors have been successfully fabricated and demonstrated. The use of a δ-doped sheet between two undoped spacer layers more effectively eliminates the potential spike at the base–emitter junction and lowers the collector–emitter offset voltage. The maximum current gain and offset voltage of 455 (533) and 55 mV (33 mV) are observed, respectively, for the unpassivated (passivated) emitter device at room temperature. The base surface recombination current of the studied devices is also investigated in this paper. The studied devices are therefore promising for practical circuit applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
