Abstract
New InP/InGaAs δ-doped heterojunction bipolar transistors have been successfully fabricated and demonstrated. The use of a δ-doped sheet between two undoped spacer layers more effectively eliminates the potential spike at the base–emitter junction and lowers the collector–emitter offset voltage. The maximum current gain and offset voltage of 455 (533) and 55 mV (33 mV) are observed, respectively, for the unpassivated (passivated) emitter device at room temperature. The base surface recombination current of the studied devices is also investigated in this paper. The studied devices are therefore promising for practical circuit applications.
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