Abstract
A study on the resistance of directly sputtered films and treated films of Indium Tin Oxide (ITO) is done to initiate an extensive study on the material. This study involves variation in terms of number of layers and duration of deposition. Treated films are produced by undergoing annealing process which is carried out using Split Type Tube Furnace. Resistance measurements were carried out using Semiconductor Parametric Analyzer (SPA). Results show that the directly sputtered ITO films produced lower resistance compared to the treated ITO films.
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