Abstract
In order to evaluate the potential of amorphous silicon carbide (a-SiC) films for piezoresistive sensors applications, a pressure sensor has been developed based on this material. The deposition conditions and properties of a-SiC films deposited on thermally oxidized (100) Si substrates by two techniques enhanced by plasma, PECVD (plasma enhanced chemical vapor deposition) and RF magnetron sputtering, are briefly described and compared. Among the SiC films produced, we choose the nitrogen-doped PECVD SiC film to fabricate the piezoresistors of the sensor. The structure of the sensor consists of six a-SiC piezoresistors, configured in Wheatstone bridge, on a SiO2/Si square diaphragm. The sensor was tested for applied pressure ranging from 0 to 12 psi and supply voltage of 12 V. A preliminary study of the influence of the temperature on the performance of the sensor was performed by experimental measurements and theoretical investigations.
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