Effect of substrate temperature on structure and intrinsic stress in vapor-deposited amorphous silicon carbide film

Abstract

Amorphous silicon carbide (a-SiC) films were deposited on crystalline silicon substrates using molecular dynamics (MD) simulation. MD simulations for various substrate temperatures were performed to consider the effect of substrate temperature on structure and intrinsic stress in vapor-deposited a-SiC films. Chemical order in the a-SiC film was increased by annealing effect as the substrate temperature increased, and consequently, the high chemical-ordered a-SiC film had high-density and low-tensile intrinsic stress. The chemical ordering during cooling was analyzed with radial distribution functions. The profiles of intrinsic stress along the z axis were obtained, and the changes in stress distribution around the interface with substrate temperature were examined.