Abstract
PECVD (plasma enhanced chemical vapor deposition) technology has been used for the deposition of amorphous SiC films onto single crystal silicon substrates at temperatures below 300 °C. Laser annealing was carried out for the a-SiC (amorphous silicon carbide) films using UV (ultra violet) and IR (infrared) lasers simultaneously to get crystalline film structures. From topographies of AFM (atomic force microscopy) of the laser-annealed films, a lot of cubic structures were observed on the surface, which indicates the existence of polycrystalline structures. Results of SEM (Scanning Electron Microscopy), FTIR (Fourier transform infrared), and XRD (X-ray diffraction) measurements show formations of SiC polycrystals through a structure re-ordering by laser treatment.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
