Abstract
The method of computer aided vacancy migration analysis has been developed to predict the stress induced voiding (SiV) reliability. In this method, distribution of hydrostatic stress was calculated by the finite element analysis (FEA), and vacancy concentration distribution was calculated by the finite difference analysis (FDA). In this paper, SiV acceleration tests were conducted in various widths of Cu lines in organic ultralow-k dielectric (Cu/Ta/ULK/SiCN) or silicon oxide dielectric (Cu/Ta/SiO2/SiCN) and these results were compared with the results of the vacancy migration analyses. The number of SiV failures increased in the line with width of 0.35 µm for Cu/Ta/SiO2/SiCN interconnects and 0.20 µm for Cu/Ta/ULK/SiCN interconnects, respectively, under SiV acceleration tests. The results obtained by vacancy migration analysis show similar behavior as the results of SiV acceleration tests. These results reveal that the vacancy migration analysis is useful to predict reliability of interconnects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
