Finite element simulation of hydrostatic stress in copper interconnects

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This work focuses on numerical modeling of hydrostatic stress, which is critical to the formation of stress-induced voiding (SIV) in copper damascene interconnects. Using three-dimensional finite element analysis, the distribution of hydrostatic stress is examined in copper interconnects and models are based on the samples, which are fabricated in industry. In addition, hydrostatic stress is studied through the influences of different low-k dielectrics, barrier layers and line widths of copper lines, and the results indicate that hydrostatic stress is strongly dependent on these factors. Hydrostatic stress is highly non-uniform throughout the copper structure and the highest tensile hydrostatic stress exists on the top interface of all the copper lines.