Abstract
Precursors for the deposition of (SBT) thin films, and were characterized by Fourier transform-infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The choice of Bi precursor significantly affects the growth process. It was found that is more stable than The incorporation rate of Bi into the film is expected to be substantially lower with We chose as the Bi precursor because is similar in decomposition characteristics to and also provides a better control of Bi composition at low temperature. SBT films were deposited on a substrate by metallorganic chemical vapor deposition using a direct liquid injection at a temperature of 450°C. This temperature was selected to obtain a high composition reproducibility. Films were annealed after deposition at temperatures ranging from 650 to 800°C to obtain crystallized films. For the film annealed at 800°C, the remanent polarization and coercive field were 16.4 μC/cm2 and 51 kV/cm, respectively. The films showed fatigue-free characteristics up to cycles under a bipolar wave of 5 V. © 2001 The Electrochemical Society. All rights reserved.
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