Abstract
Precursors for the direct liquid injection (DLI) metallorganic chemical vapor deposition (MOCVD) of (BLT) thin films, -pentamethyldiethylenetriamine) and were characterized by Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry, and thermogravimetric analysis. The reactions among Bi, La, and Ti precursors in a single-mixture solution was identified using a -nuclear magnetic resonance spectrometer and it was shown that was better than as a Bi precursor because reacted with in the solvent. The gas phase decomposition temperatures of three precursors, and were found with FTIR to be 400, 375, and 325°C, respectively. Evaporator temperature was optimized from the deposition rate of the single oxide from each precursor. The deposition behavior could be explained in terms of the precursor characteristics. Fatigue-free and highly c axis oriented BLT thin films were grown on at the deposition temperature of 400°C. For the BLT film annealed at 650°C, the remanent polarization and coercive field were 12 μC/cm2 and 56 kV/cm, respectively. The BLT capacitors did not show any significant fatigue up to cycles at a frequency of 1 MHz. © 2003 The Electrochemical Society. All rights reserved.
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