Abstract
Polarization retention characteristics of ferroelectric SrBi 2 Ta 2 O 9 (SBT) thin films prepared by metallorganic chemical vapor deposition (MOCVD) with and without Bi 2 O 3 buffer layers on Pt/Ti/SiO 2 /Si substrates have been investigated. The retention loss of Pt/SBT/Pt capacitor is larger than that of Pt/SBT/Bi 2 O 3 /Pt capacitor. The polarization of Pt/SBT/Pt and Pt/SBT/Bi 2 O 3 /Pt capacitors at 3 X 10 4 s showed a loss of approximately 9 and 6%, respectively. In SBT films with a Bi 2 O 3 buffer layer, both the second phase and the bismuth deficient layer were not formed at the interface between the SBT films and Pt bottom electrode. SBT films with a Bi 2 O 3 buffer layer have an excellent interface property, resulting in an improvement of retention properties of SBT thin films.
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