Abstract
Platinum thin films were deposited on /Si substrates at a deposition temperature of 325°C by metallorganic chemical vapor deposition using Pt‐hexafluoroacetylacetonate as a precursor. It was found that the addition of the proper amount of gas was essential to deposit high‐quality Pt thin films. Dense Pt thin films with smooth surfaces and high electrical conductivity were deposited above a critical flow rate of 50 sccm. The introduction of gas made the Pt films partially oxidized, resulting in the reduction of their surface and grain boundary energy. Therefore, wettability of the Pt thin films on /Si was improved and the grain growth of the films by a postdeposition annealing was suppressed as the addition of was increased during the deposition.
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