Abstract
Presently, silicon device technology phosphorous diffusions with high surface concentrations are commonly used for the formation of the emitter areas. Annealing treatments at or below 800°C have been shown to lead to the formation of extrinsic dislocation loops in such areas. A transmission electron microscopic investigation combined with resistivity measurements and profile determinations leads to the interpretation of these loops as a primary step of phosphorous precipitation in the supersaturated lattice.
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