Post-trench restoration for vertical GaN power devices

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The impact of the post-trench restoration on the electrical characteristics of vertical GaN power devices is systematically investigated in this work. Following the achievement of microtrench-free GaN trench structure with modified dry etching conditions, the post-trench tetramethylammonium hydroxide (TMAH)-based wet etching and UV/Ozone-based oxidation process are employed to further refine the trench profile. It is shown that the c-plane trench bottom is restored to the level of unetched surface, as evidenced by the improved Schottky interface. Additionally, the post-trench treatment exhibits the anisotropic characteristics with the preferred rounded corner profile on m-plane sidewall compared to a-plane sidewall. The simulations and experimental results demonstrate that the trench MOS barrier Schottky (TMBS) rectifier based on m-plane sidewall could suppress the electric field crowding at the trench corner and, hence, reduce the reverse leakage current by 1–2 orders of magnitude. Furthermore, the MOSCAP test structures were fabricated on the trenches. The extracted interface trap density (Dit) confirms the effective restoration of trench bottom. However, the sidewall surface exhibits the relatively large Dit, which emphasizes the necessity of optimizing the sidewall, particularly for devices incorporating sidewall channel. The demonstrated post-trench restoration technique improves the surface quality and trench structure for the significantly enhanced electrical performances, which is essential for the development of vertical GaN power devices.