Introduction

Abstract

Research history of GaN-based devices and defects reducing the performance is reviewed. Vertical GaN power devices are likely sensitive to threading dislocations compared with the lateral devices because the high electric field along with the dislocations are applied. Deep levels formed via point defects compensate carriers in vertical power devices because of the lower carrier concentrations compared with optical devices. The physical properties of GaN are also summarized based on the most reliable experimental data, which is the basis of discussions on characterizations of defects in this book.