Abstract
In this work, we investigate the impact of high-temperature Post-Deposition Annealing (PDA) on Al0.5Si0.5Ox deposited by Atomic Layer Deposition (ALD). Reversed hysteresis is observed and explained by mobile charges originating from K+ and Na+ impurities. The high-temperature annealing does not cure the presence of these mobile charges. We also report the onset of film and interface degradation after annealing above 750 °C under N2, with both inhomogeneous aluminium and silicon composition, signs of AlSiO crystallization and interfacial gallium oxide growth.
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