Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors

Abstract

This paper proposes a possible unified model for the Hooge parameter by considering the impact of transport dimensionality on the Hooge parameter behavior of various inversion-layer-channel metal-oxide-semiconductor field-effect transistors. Past experiments show that the Hooge parameter has a couple of peculiar behaviors. Based on a phenomenological consideration, the original mobility-based model for the Hooge parameter is shown to provide only a partial understanding of the results. It is also observed that, in contrast to past models, the interpretation of some aspects of the Hooge parameter strongly depends on how the two fluctuation modes, the carrier-density fluctuation and the mobility fluctuation, correlate. The phenomenological model proposed here gives a fundamental physical basis that allows important aspects of the Hooge parameter to be interpreted; the model also introduces three basic parameters (the Hooge parameter elements for the carrier-density fluctuation, the mobility fluctuation, and the cross-correlation component). Theoretical expressions for the three basic Hooge parameters are given by merging the fundamental Hooge model, Handel's theory, statistical physics, and quantum-mechanical transport physics. The gate voltage dependence of the Hooge parameter can be explained reasonably well by stating that the screening length rules the dielectric function and that the mobility fluctuation and carrier density fluctuation are correlated. Finally, the theoretical models are examined against the results of past experiments.