Impact of transport dimensionality on the Hooge parameter in inversion-layer-channel MOSFETs

Abstract

This paper considers the impact of transport dimensionality on the Hooge parameter behavior of various inversion-layer-channel MOSFETs. The phenomenological model proposed here gives a fundamental physical basis that allows important aspects of the Hooge parameter to be interpreted; the model also introduces three basic parameters (the Hooge parameter elements for the carrier-density fluctuation, the mobility fluctuation, and the cross-correlation component).