Abstract
Aluminum fluctuations of AlGaAs epilayers deposited on GaAs are deduced from local scanning transmission electron microscope cathodoluminescence spectra. These fluctuations induce stress variations which are large enough to induce photoplastic glide of dislocations. Even if the lattice mismatch is very low for such epitaxial layers, such composition fluctuations can be seen as one possible origin of degradation mechanisms of optical devices. Furthermore, the order of magnitude of the stress fluctuation allows a rough estimate of the optical energy contribution to the activation energy for dislocation glide. This optical contribution (≂0.9 eV) is much more likely to correspond to electronic transitions at a dislocation reconstruction defect than to transitions related to dislocation intrinsic bands.
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