Abstract
The lattice mismatch at the epitaxial layer-substrate interface was studied by X-ray diffraction techniques for both GaP/GaP and GaAlAs/GaAs epitaxial growth from the liquid phase. A planar defect at the interface, whose fault vector is normal to the interface, was observed. This defect is due to a lattice mismatch between the epitaxial layer and the substrate, however the deformation of the unit cell in the epitaxial layer is such that the lattice expands or contracts normal to the substrate but the lattice spacing parallel to the substrate does not change. The volumes of the unit cells in the epitaxial and the substrate crystal are different due to the difference of nitrogen concentration (GaP/GaP) or heteroepitaxy (GaAlAs/GaAs). The origin of this lattice mismatch was also related to the growth conditions. It was found that the lattice mismatch occurred depending on the magnitude of the gradient of the lattice parameter in the epitaxial layer.
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