Abstract
Microstructure and related properties of Czochralski silicon heavily doped with hydrogen by implantation (hydrogen dose 2.7 × 1017 cm–2, at 24 keV) or by hydrogen plasma etching (reference samples) and treated at up to 1270 K (HT) under argon pressure up to 1.1 GPa (HP) are investigated. The structure of HT–HP treated Cz-Si:H is similar to that of porous (spongy) Si. Visible photoluminescence at 2.0–2.8 eV originates from accumulation of hydrogen and oxygen atoms near the sample surface. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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