Abstract
We report the first study on the porous boron δ-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron δ-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron δ-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron δ-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si.
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