Abstract
The sensitivity of linear siloxane polymers has been increased in the deep uv by the addition of photoinitiators. The resist system discussed in this paper has a sensitivity of 20mJ/cm2 at 2537A., with a contrast (γ) of 2.6. When used as a thin imaging layer in a double layer system, 0.75um resolution has been achieved on the PE500 exposure tool. Data is presented on exposure linewidth variation, resist stability, and etch rate in an oxygen plasma.
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