Abstract
In this paper X-ray, ESCA, TEM and electrical measurements on evaporated CdSe films, used in thin film transistors (TFT), are reported. Special attention has been paid to semiconductor films obtained from recrystallized mixtures of CdSe and 1–2% In2Se3. Such films might be represented as (3CdSe)x(In2Se3)1-x. Doping the CdSe evaporation source with In yields 20 μm self-aligned TFTs with excellent characteristics: electron mobility in the evaporated thin films increases from 20–50 cm2/V · s for undoped films to more than 100 cm2/V · s for doped films. DC stability behaviour is also improved: the TFT current drop after 180 s is reduced from 30% to less than 5%.
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