Poly(Vinyl Alcohol) Gate Dielectric Treated With Anionic Surfactant in C60 Fullerene-Based n-Channel Organic Field Effect Transistors

Ali Nawaz,Ivo A Hümmelgen,Cristiane De Col

doi:10.1590/1980-5373-mr-2015-0746

Ali Nawaz, Ivo A Hümmelgen + Show 1 more

Open Access

https://doi.org/10.1590/1980-5373-mr-2015-0746

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Journal: Materials Research	Publication Date: Sep 19, 2016
Citations: 6	License type: cc-by

Affiliation: Federal University of Paraná

Abstract

We report on the preparation and performance enhancement of n-type low-voltage organic field effect transistors (FETs) based on cross-linked poly(vinyl alcohol) (cr-PVA) as gate dielectric and C60 fullerene as channel semiconductor. Transistors were prepared using bottom-gate top-contact geometry and exhibited field-effect mobility (µFET) of 0.18 cm2V-1s-1. Treatment of the gate dielectric surface with an anionic surfactant, sodium dodecyl sulfate (SDS), passivates the positively charged defects present on the surface of cr-PVA, hence resulting in overall transistor performance improvement with an increase in µFET to 1.05 cm2V-1s-1 and additional significant improvements in dielectric capacitance, transistor on/off current ratio and transconductance.

Highlights

Organic field effect transistors (FETs) have been a subject of much research over the past few decades due to the great technological up burst towards flexible organic electronics
In this work we report on the preparation of transistors with a solution-processed flexible substrate compatible organic gate dielectric, cross-linked poly(vinyl alcohol) (cr-PVA) and C60 channel semiconductor
We show an easy and cost-effective method to suppress the action of negative charge traps present on the surface of cr-PVA using the deposition of an anionic surfactant, sodium dodecyl sulfate (SDS), in turn obtaining an enhanced transistor performance

Summary

Introduction

Organic field effect transistors (FETs) have been a subject of much research over the past few decades due to the great technological up burst towards flexible organic electronics. In a grounded-source FET, the gate voltage VGS aims the accumulation of mobile charges at the vicinity of the I/S interface, while the drain voltage VDS is applied to promote the charge transport along the channel.

Results

Conclusion