Operational stability enhancement of low-voltage organic field-effect transistors based on bilayer polymer dielectrics

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Bilayer polymer dielectrics consisting of hydrophobic thin layers on high-k polyvinylalcohol (PVA) are utilized to realize p-type and n-type low-voltage organic field-effect transistors (OFETs), which show superior mobility and operational stability compared with the devices with PVA single-layer dielectric. The OFETs with top layers containing discrete π-groups, such as polystyrene (PS) and poly(2-vinyl naphthalene) (PVN), show stronger bias stress instability than those with π-group free polymethylmethacrylate (PMMA), and it is ascribed to slow charge trapping into the π-groups under bias stress. By integrating p-type and n-type low-voltage OFETs based on PMMA/PVA bilayer dielectric, a low-power high-stability complementary inverter is achieved.