Abstract
We have proposed heterojunction thin-film transistors having a stacked structure of poly-crystal silicon-carbon (SiC/sub x/) and Si thin films, both of which are prepared by an excimer-laser crystallization method. A Si/SiC/sub x/ interface after intense excimer-laser irradiation for crystallization, was as abrupt as that of the as-deposited and amorphous structure. The device had a relatively high mobility of about 4 cm/sup 2//Vs and a sufficiently low leakage current of an order of 10/sup -14/ A//spl mu/m even under intense light illumination conditions.
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