Abstract
Thin film crystalline Si solar cells on cheap Si-based substrates have a large potential in PV technology. Optical light confinement is a very crucial point of such thin film structures. Porous Si (PS) as a perfect light diffuser could be used as a backside reflector if its multi-layer structure would be preserved during the deposition of a thin Si film. That is why low-energy plasma enhanced chemical vapor deposition (LEPECVD) is chosen to deposit a thin Si film on a PS multilayer structure at low temperature and a high deposition rate. This technique allows one to deposit a Si film with an epitaxial quality on the top of PS without destroying its multilayer structure as revealed by high-resolution X-ray diffraction and cross-sectional transmission electron microscopy (TEM). The epilayers of 10 μm are grown at very high deposition rate (around 3 nm/s) at 590°C. TEM-analysis reveals that during the deposition a high density of defects forms at the interface PS/epi-Si and spreads through the whole epilayer. The defect density is decreased when the deposition temperature is increased to 645°C. LEPECVD appears to be an appropriate deposition technique to grow thin Si films on cheap Si based substrates with PS reflector.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.