Abstract
Even in latest technologies, poly-silicon-related failures are well-known as a reliability risk. Due to the fact, that polysilicon reoxidizes in subsequent processing, physical failures frequently do not occur as time-zero functional failures. However, the thin reoxidation can be cracked by voltage pulses during field application. This paper describes the most important mechanisms like particles, stringers, trimming-fuse recombinations and polySi-extensions with respect to failure diagnosis, screening and reliability aspects.
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