Abstract
Thin film devices are generating increasing interest for large area electronics on glass applications. The use of glass substrates limits the temperature range available for device processing, leading to the widespread use of plasma deposited amorphous silicon. However, due to the low carrier mobility in this material, attention is being directed towards low temperature processed poly-silicon devices. In this paper the different technologies for the fabrication of poly-Si TFTs are reviewed and the influence of the resulting grain structure on device performance is discussed.
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