Abstract
The bottom gate top contact organic thin film transistors (OTFTs) have been fabricated on silicon substrate using poly (3, 3'”-dialkylquaterthiophene) (PQT-12) polymer by floating film transfer method (FTM) and illuminated from the top with different wavelength and intensity of the visible light. The performance parameters of OTFT such as field effect mobility, threshold voltage, subthreshold swing, and on/off current ratio have been found as 7.8×10−2 cm2/Vs, −8.1 V, −11.3 V/dec, and 4.1×102, respectively under dark conditions. The maximum drain current in the OTFT is observed for 540 nm of light. The drain current is found to increase with the increase in incident light intensity and found a maximum responsivity of 7.4 A/W at 50 μW/cm2.
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