Polarized Raman spectra in β-Ga2O3 single crystals

Abstract

Polarized Raman spectra were measured from (010) Mg-doped, (100) Si-doped, and (001) unintentionally-doped β-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods. The Ag and Bg Raman active modes were perfectly separated in the spectra according to the polarization selection rules. To the best of our knowledge, this is the first experimental observation of a complete set of polarized Raman spectra of β-Ga2O3. The results are ensured by the high uniformity of crystalline orientation and surface flatness of the present substrates.