Abstract
We investigated polarized emission from a GaN-based ultraviolet light-emitting diode (UV-LED) with a subwavelength grating (SWG) on the surface. The electroluminescence (EL) spectra showed that the UV-LED exhibits high polarization selectivity, as high as at a wavelength of 360 nm. The polarized EL characteristics were discussed by the theoretical consideration of Bloch modes resulting from the spatial periodicity of the refractive index in the SWG region and also by finite difference time domain calculations to explore the electromagnetic field. We succeeded in demonstrating the feasibility of a highly polarized UV-LED grown on c-plane sapphire.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
