Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes

Abstract

Principal issues of using pyrometry for temperature monitoring in low-temperature processes in the technology of production of semiconductor structures are considered by an example of growing mercury–cadmium–telluride (MCT) layers on the GaAs substrate by the method of molecular beam epitaxy. Optical and thermophysical models are proposed to describe the processes of radiant heat transfer in a vacuum chamber. Based on these models, it is demonstrated that radiation from the heater and the signal reflected from the chamber walls, which are comparable in magnitude with the measured radiation emitted by the sample, should be taken into account in interpreting data measured by a pyrometer. Methods of useful signal identification are found. Experiments on temperature measurement by a pyrometer mounted on the MCT growth chamber are performed. Results of these experiments are in good agreement with theoretical predictions.