Abstract
We synthesized CeB6 thin films by using a molecular beam epitaxy (MBE) method. Optimal growth conditions for this material were investigated. Structure, constituent element and electronic state of the film were evaluated. The grown films show a Kondo behavior as a function of temperature, which is consistent with previous works. These results show that CeB6 was successfully grown by MBE method. However, different physical properties from bulk have appeared in detail. It may be ascribed to a possible change in the crystal structure due to either intrinsic effect arising from the interface between substrates and grown films or extrinsic effect such as impurities.
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